English

Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells

Mesoscale and Nanoscale Physics 2015-05-27 v1

Abstract

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Land\'e-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure higher order effect that exists as well for diamond type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable to map out the internal -otherwise hidden- symmetries in two dimensional systems. Fourth order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects.

Keywords

Cite

@article{arxiv.1104.1360,
  title  = {Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells},
  author = {J. Hübner and S. Kunz and S. Oertel and D. Schuh and M. Pochwała and H. T. Duc and J. Förstner and T. Meier and M. Oestreich},
  journal= {arXiv preprint arXiv:1104.1360},
  year   = {2015}
}
R2 v1 2026-06-21T17:50:53.560Z