We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.
@article{arxiv.1912.11403,
title = {All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology},
author = {Léo Bourdet and Louis Hutin and Benoit Bertrand and Andrea Corna and Heorhii Bohuslavskyi and Anthony Amisse and Alessandro Crippa and Romain Maurand and Sylvain Barraud and Matias Urdampilleta and Christopher Bäuerle and Tristan Meunier and Marc Sanquer and Xavier Jehl and Silvano De Franceschi and Yann-Michel Niquet and Maud Vinet},
journal= {arXiv preprint arXiv:1912.11403},
year = {2019}
}
Comments
arXiv admin note: substantial text overlap with arXiv:1912.09806