We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.
@article{arxiv.1912.09806,
title = {All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology},
author = {L. Hutin and L. Bourdet and B. Bertrand and A. Corna and H. Bohuslavskyi and A. Amisse and A. Crippa and R. Maurand and S. Barraud and M. Urdampilleta and C. Bäuerle and T. Meunier and M. Sanquer and X. Jehl and S. De Franceschi and Y. -M. Niquet and M. Vinet},
journal= {arXiv preprint arXiv:1912.09806},
year = {2019}
}