Related papers: Spin-Lattice Relaxation in Si Quantum Dots
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time $T_1$ affected as the electron is shuttled between the…
High degree of preservation of spin states during energy relaxation processes mediated by optical phonons is demonstrated in a single quantum dot. Optical-phonon resonance and relevant suppression of spin relaxation are clearly identified…
Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate…
While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural…
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…
g-factor tuning of electrons in quantum dots is studied as function of in-plane and perpendicular magnetic fields for different confinements. Rashba and Dresselhaus effects are considered, and comparison is made between wide- and narrow-gap…
We investigate ultrafast demagnetization due to electron-phonon interaction in a model band-ferromagnet. We show that the microscopic mechanism behind the spin dynamics due to electron-phonon interaction is the interplay of scattering and…
Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…
Excitation spectra of square lattice Heisenberg antiferromagnets in magnetic fields are investigated by the spin-wave theory. It is pointed out that a rotonlike structure appears in a narrow range of magnetic fields, as a result of strong…
Spin relaxation of conduction electrons in metals is significantly influenced by the Fermi surface topology. Electrons near Brillouin zone boundaries, special symmetry points, or accidental degeneracy lines have spin flip rates much higher…
(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and…
We report a systematic study of the spin relaxation anisotropy between single electron Zeeman sublevels in cuboidal GaAs quantum dots (QDs). The QDs are subject to an in-plane magnetic field. As the field orientation varies, the relaxation…
We develop a microscopic theory of spin relaxation of a two-dimensional electron gas in quantum wells with anisotropic electron scattering. Both precessional and collision-dominated regimes of spin dynamics are studied. It is shown that, in…
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…
Semiconductor quantum dots provide a spin-coupled system of an electron and nuclei via enhanced hyperfine interaction. We showed that the nuclear spin polarization in single quantum dots can have three stable branches under a longitudinal…
We consider relaxation of an electron spin in a nanotube quantum dot due to its coupling to flexural phonon modes, and identify a new spin-orbit mediated coupling between the nanotube deflection and the electron spin. This mechanism…
The temperature dependence of the electron spin-lattice relaxation SLR was studied in Er0.01Y0.99Ba2Cu3Ox compounds. The data derived from the electron spin resonance ESR and SLR measurements were compared to those from inelastic neutron…
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…
We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact…