Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO2 has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.
Cite
@article{arxiv.0805.3451,
title = {Carrier relaxation in Si/SiO$_2$ quantum dots},
author = {A. A. Prokofiev and S. V. Goupalov and A. S. Moskalenko and A. N. Poddubny and I. N. Yassievich},
journal= {arXiv preprint arXiv:0805.3451},
year = {2015}
}
Comments
8 pages, 2 figures, submitted as an extended abstract to the E-MRS Spring Meeting 2008