Related papers: Carrier relaxation in Si/SiO$_2$ quantum dots
Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation…
We investigate theoretically spin relaxation in heavy hole quantum dots in low external magnetic fields. We demonstrate that two-phonon processes and spin-orbit interaction are experimentally relevant and provide an explanation for the…
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to…
We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by…
While time-dependent perturbation theory shows inefficient carrier-phonon scattering in semiconductor quantum dots, we demonstrate that a quantum kinetic description of carrier-phonon interaction predicts fast carrier capture and…
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…
A microscopic theory is used to study the optical properties of semiconductor quantum dots. The dephasing of a coherent excitation and line-shifts of the interband transitions due to carrier-carrier Coulomb interaction and carrier-phonon…
The time evolution of optically excited carriers in semiconductor quantum wells and quantum dots is analyzed for their interaction with LO-phonons. Both the full two-time Green's function formalism and the one-time approximation provided by…
Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and…
We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…
This chapter is devoted to the recent theoretical results on the optical quantum control over charges confined in quantum dots under influence of phonons. We show that lattice relaxation processes lead to decoherence of the confined carrier…
The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited…
We theoretically study the relaxation of electron orbital states of a double quantum dot system due to two-phonon processes. In particular, we calculate how the relaxation rates depend on the separation distance between the quantum dots,…
We present an experimental and theoretical study of the conduction states of crystalline Si films confined within amorphous SiO_2 barriers, using the Si-2p core-level excitations. The spectral peaks near the conduction band minimum are…
Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative…
We investigated the photoexcited carrier dynamics in Si by using optical pump and terahertz probe spectroscopy in an energy range between 2 meV and 25 meV. The formation dynamics of excitons from unbound e-h pairs was studied through the…
Phonon-induced spin relaxation in coupled lateral quantum dots in the presence of spin-orbit coupling is calculated. The calculation for single dots is consistent with experiment. Spin relaxation in double dots at useful interdot couplings…
We calculate the rates of phonon-assisted hyperfine spin flips during electron and hole tunneling between quantum dots in a self-assembled quantum dot molecule. We show that the hyperfine process dominates over the spin-orbit-induced spin…
This Chapter contains a review of the recent results, both experimental and theoretical, related to optical control of carriers confined in semiconductor quantum dots. The physics of Rabi oscillations of exciton and biexciton occupations,…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…