Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems
Mesoscale and Nanoscale Physics
2009-11-11 v2 Materials Science
Abstract
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.
Keywords
Cite
@article{arxiv.cond-mat/0509692,
title = {Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems},
author = {J. Seebeck and T. R. Nielsen and P. Gartner and F. Jahnke},
journal= {arXiv preprint arXiv:cond-mat/0509692},
year = {2009}
}
Comments
4 pages, 3 figures, accepted for publication in EPJ B