English

Hole spin relaxation in semiconductor quantum dots

Materials Science 2007-05-23 v1 Other Condensed Matter

Abstract

Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many features which are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.

Keywords

Cite

@article{arxiv.cond-mat/0409249,
  title  = {Hole spin relaxation in semiconductor quantum dots},
  author = {C. Lü and J. L. Cheng and M. W. Wu},
  journal= {arXiv preprint arXiv:cond-mat/0409249},
  year   = {2007}
}

Comments

10 pages, 10 figures