English

Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths

Mesoscale and Nanoscale Physics 2019-01-01 v2

Abstract

We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In0.53_{0.53}Al0.24_{0.24}Ga0.23_{0.23}As/InP quantum dots with emission wavelengths around 1.51.5~μ\mum by pump-probe Faraday rotation spectroscopy. Electron spin dephasing due to the randomly oriented nuclear Overhauser fields is observed. At low temperatures we find a sub-microsecond longitudinal electron spin relaxation time T1T_1 which unexpectedly strongly depends on temperature. At high temperatures the electron spin relaxation time is limited by optical phonon scattering through spin-orbit interaction decreasing down to 0.10.1~ns at 260~K. We show that the hole spin relaxation is activated much more effectively by a temperature increase compared to the electrons.

Keywords

Cite

@article{arxiv.1806.10515,
  title  = {Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths},
  author = {A. V. Mikhailov and V. V. Belykh and D. R. Yakovlev and P. S. Grigoryev and J. P. Reithmaier and M. Benyoucef and M. Bayer},
  journal= {arXiv preprint arXiv:1806.10515},
  year   = {2019}
}

Comments

7 pages, 3 figures