Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity
Mesoscale and Nanoscale Physics
2009-11-11 v2
Abstract
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulk-like systems is obtained by varying the width of the slab.
Cite
@article{arxiv.cond-mat/0509568,
title = {Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity},
author = {Y. Y. Liao and Y. N. Chen and D. S. Chuu and T. Brandes},
journal= {arXiv preprint arXiv:cond-mat/0509568},
year = {2009}
}
Comments
5 pages, 4 figures, to apper in Phys. Rev. B (2006)