Related papers: Highly efficient room temperature spin injection i…
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…
The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement…
In order to enhance spin injection efficiency from ferromagnetic (FM) metal into a two-dimensional electron gas (2DEG), we introduce another FM metal and two tunnel barriers (I) between them to investigate the current polarization in such…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…
We have realised a semiconductor quantum structure that produces electroluminescence while operating in the light-matter strong coupling regime. The mid-infrared light emitting device is composed of a quantum cascade structure embedded in a…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the…
We use spin-resolved electron tunneling to study the exchange field in the Al component of EuS/Al bilayers, in both the superconducting and normal-state phases of the Al. Contrary to expectation, we show that the exchange field, Hex, is a…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the…
Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation…
We have investigated the spin current polarization without the external magnetic field in the resonant tunneling diode with the emitter and quantum well layers made from the ferromagnetic GaMnN. For this purpose we have applied the…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
Sustaining exotic quantum mechanical phases at high temperatures is a long-standing goal of condensed matter physics. Among them, half-metals are spin-polarized conductors that are essential for realizing room-temperature spin current…
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a…
We report detailed investigations of hybrid organic-inorganic vertical spin valves. Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3) organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as the bottom…
We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons…