Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

T. Sasaki; T. Oikawa; T. Suzuki; M. Shiraishi; Y. Suzuki; K. Noguchi

doi:10.1063/1.3367748

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

Materials Science 2015-05-18 v1

Authors: T. Sasaki , T. Oikawa , T. Suzuki , M. Shiraishi , Y. Suzuki , K. Noguchi

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Abstract

The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that by the gap dependence of non-local signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major source of temperature dependence of non-local signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.

Keywords

spin diffusion length silicon Hanle effect spin precession non-local magnetoresistance temperature dependence spin polarization

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@article{arxiv.1003.1777,
  title  = {Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession},
  author = {T. Sasaki and T. Oikawa and T. Suzuki and M. Shiraishi and Y. Suzuki and K. Noguchi},
  journal= {arXiv preprint arXiv:1003.1777},
  year   = {2015}
}

Comments

12 pages, 4 figure, To appear in Applied Physics Letters.

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

Abstract

Keywords

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