Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be impossible to measure. Using a Silicon device with lateral injector-detector separation over 2 millimeters, and geometrically-induced dephasing making spin transport completely incoherent, we show experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic field.
@article{arxiv.0809.2225,
title = {Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices},
author = {Biqin Huang and Hyuk-Jae Jang and Ian Appelbaum},
journal= {arXiv preprint arXiv:0809.2225},
year = {2009}
}