Spin-Polarized Electron Transport through Nanometer-Scale Al Grains

L. Y. Zhang; C. Y. Wang; Y. G. Wei; X. Y. Liu; D. Davidovic

doi:10.1103/PhysRevB.72.155445

Spin-Polarized Electron Transport through Nanometer-Scale Al Grains

Mesoscale and Nanoscale Physics 2009-11-11 v3

Authors: L. Y. Zhang , C. Y. Wang , Y. G. Wei , X. Y. Liu , D. Davidovic

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Abstract

We investigate spin-polarized electron tunnelling through ensembles of nanometer scale Al grains embedded between two Co-reservoirs at 4.2K, and observe tunnelling-magnetoresistance (TMR) and effects from spin-precession in the perpendicular applied magnetic field (the Hanle effect). The spin-coherence time ( $T_2^\star$ ) measured using the Hanle effect is of order $ns$ . The dephasing is attributed to electron spin-precession in local magnetic fields. Dephasing process does not destroy $TMR$ , which is strongly asymmetric with bias voltage. The asymmetric TMR is explained by spin relaxation in Al grains and asymmetric electron dwell times.

Keywords

spintronics magnetic tunnel junctions magnetoresistance

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@article{arxiv.cond-mat/0502181,
  title  = {Spin-Polarized Electron Transport through Nanometer-Scale Al Grains},
  author = {L. Y. Zhang and C. Y. Wang and Y. G. Wei and X. Y. Liu and D. Davidovic},
  journal= {arXiv preprint arXiv:cond-mat/0502181},
  year   = {2009}
}

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4 pages 4 figures

Spin-Polarized Electron Transport through Nanometer-Scale Al Grains

Abstract

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