Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, illustrating the non-trivial consequences of employing oblique magnetic fields (due to misalignment or intentional, fixed in-plane field components) to measure the effects of spin precession. Model results are also calculated for Hanle measurements under conditions of diffusion-dominated transport, revealing an expected Hanle peak-widening effect induced by the presence of fixed in-plane magnetic bias fields.
@article{arxiv.0801.3231,
title = {Oblique Hanle Effect in Semiconductor Spin Transport Devices},
author = {Jing Li and Biqin Huang and Ian Appelbaum},
journal= {arXiv preprint arXiv:0801.3231},
year = {2009}
}