A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.
@article{arxiv.1103.0355,
title = {Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry},
author = {Masashi Shiraishi and Yoshiya Honda and Eiji Shikoh and Yoshishige Suzuki and Teruya Shinjo and Tomoyuki Sasaki and Tohru Oikawa and Kiyoshi Noguchi and Toshio Suzuki},
journal= {arXiv preprint arXiv:1103.0355},
year = {2011}
}