Spin Drift in Highly Doped n-type Si

Makoto Kameno; Yuichiro Ando; Teruya Shinjo; Hayato Koike; Tomoyuki Sasaki; Tohru Oikawa; Toshio Suzuki; Masashi Shiraishi

doi:10.1063/1.4867650

Spin Drift in Highly Doped n-type Si

Materials Science 2015-06-18 v1 Mesoscale and Nanoscale Physics

Authors: Makoto Kameno , Yuichiro Ando , Teruya Shinjo , Hayato Koike , Tomoyuki Sasaki , Tohru Oikawa , Toshio Suzuki , Masashi Shiraishi

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Abstract

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.

Keywords

spintronics spin chains

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@article{arxiv.1401.3524,
  title  = {Spin Drift in Highly Doped n-type Si},
  author = {Makoto Kameno and Yuichiro Ando and Teruya Shinjo and Hayato Koike and Tomoyuki Sasaki and Tohru Oikawa and Toshio Suzuki and Masashi Shiraishi},
  journal= {arXiv preprint arXiv:1401.3524},
  year   = {2015}
}

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16 pages, 3 figures

Spin Drift in Highly Doped n-type Si

Abstract

Keywords

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