Spin polarized electron transport near the Si/SiO2 interface
Abstract
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field at 60K. As electrons are attracted to the interface by an electrostatic gate, we observe shorter average spin transit times and an increase in spin coherence, despite a reduction in total spin polarization. This behavior, which is in contrast to the expected exponential depolarization seen in bulk transport devices, is explained using a transform method to recover the empirical spin transit-time distribution and a simple two-stage drift-diffusion model. We identify strong interface-induced spin depolarization (reducing the spin lifetime by over two orders of magnitude from its bulk transport value) as the consistent cause of these phenomena.
Cite
@article{arxiv.0906.2146,
title = {Spin polarized electron transport near the Si/SiO2 interface},
author = {Hyuk-Jae Jang and Ian Appelbaum},
journal= {arXiv preprint arXiv:0906.2146},
year = {2013}
}