Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.
@article{arxiv.1107.0359,
title = {Silicon spin communication},
author = {Hanan Dery and Yang Song and Pengke Li and Igor Zutic},
journal= {arXiv preprint arXiv:1107.0359},
year = {2011}
}