Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

F. Zhao; A. Balocchi; A. Kunold; J. Carrey; H. Carrère; T. Amand; N. Ben Abdallah; J. C. Harmand; X. Marie

doi:10.1063/1.3273393

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Other Condensed Matter 2010-03-01 v2

Authors: F. Zhao , A. Balocchi , A. Kunold , J. Carrey , H. Carrère , T. Amand , N. Ben Abdallah , J. C. Harmand , X. Marie

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Abstract

By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers.

Keywords

spin photodetector giant spin-dependent photoconductivity dilute nitride semiconductors spin injection spin filtering paramagnetic centers room temperature

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@article{arxiv.0907.4321,
  title  = {Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors},
  author = {F. Zhao and A. Balocchi and A. Kunold and J. Carrey and H. Carrère and T. Amand and N. Ben Abdallah and J. C. Harmand and X. Marie},
  journal= {arXiv preprint arXiv:0907.4321},
  year   = {2010}
}

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4 pages, 3 figures

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

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