Spin-injection Hall effect in a planar photovoltaic cell
Abstract
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE allows us to develop a quantitative microscopic theory of the phenomenon and to demonstrate its direct application in optoelectronics. We report an experimental realization of a non-magnetic spin-photovoltaic effect via the SIHE, rendering our device an electrical polarimeter which directly converts the degree of circular polarization of light to a voltage signal.
Cite
@article{arxiv.0811.3486,
title = {Spin-injection Hall effect in a planar photovoltaic cell},
author = {J. Wunderlich and A. C. Irvine and Jairo Sinova and B. G. Park and X. L. Xu and B. Kaestner and V. Novak and T. Jungwirth},
journal= {arXiv preprint arXiv:0811.3486},
year = {2015}
}
Comments
14 pages, 4 figures