A semi-classical description of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems. A heuristic model for the SHE is developed, starting with a fully quantum mechanical treatment, from which we construct an intuitive expression for the spin-Hall current and conductivity. Our method makes transparent the physical mechanism which drives the effect, and unifies the SHE across several spintronic and optical systems. Finally, we propose an analogous effect in bilayer graphene.
@article{arxiv.0903.2702,
title = {Unified Semi-Classical Description of Intrinsic Spin-Hall Effect in Spintronic, Optical, and Graphene Systems},
author = {T. Fujita and M. B. A. Jalil and S. G. Tan},
journal= {arXiv preprint arXiv:0903.2702},
year = {2010}
}