Related papers: Highly efficient room temperature spin injection i…
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due…
Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it…
Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin…
We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in…
The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these…
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to…
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…
We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor,…
We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several…
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…
There has been an intense search in recent years for long-lived spin-polarized carriers for spintronic and quantum-computing devices. Here we report that spin polarized quasi-particles in superconducting aluminum layers have surprisingly…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the…
The design of large-scale electronic circuits that are entirely spintronics-driven requires a current source that is highly spin-polarised at and beyond room temperature, cheap to build, efficient at the nanoscale and straightforward to…
Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed,…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
We observe the inverse spin Hall effect in a two-dimensional electron gas confined in AlGaAs/InGaAs quantum wells. Specifically, we find that an inhomogeneous spin density induced by the optical injection gives rise an electric current…
In this article we investigate the surface spin polarization in a 100 nm Co2Cr0.6Fe0.4Al (CCFA) film grown ex situ epitaxially on MgO(100) with a 10 nm Fe buffer layer by means of spin resolved photoemission. We show that a careful in situ…