Related papers: Tunable Negative Differential Resistance controlle…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…
Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The…
Three types of metallic nanostructures comprising niobium were investigated experimentally; in all three types, electric transport at very low temperatures was governed by Coulomb blockade effects. 1. Thin film strips of niobium could be…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb…
Electron transport through a three-electrode triple-quantum-dot ring with the source electrode of spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated. We find clear charge and spin currents in the drain…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…
We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at…
We theoretically show how the spin orientation of a single magnetic adatom can be controlled by spin polarized electrons in a scanning tunneling microscope configuration. The underlying physical mechanism is spin assisted inelastic…
We investigate the spin dynamics of a quantum dot with a spin-1/2 ground state in the Coulomb blockade regime and in the presence of a magnetic rf field leading to electron spin resonances (ESR). We show that by coupling the dot to leads,…
We report on the observation of Kondo and split Kondo peaks in single-molecule transistors containing a single spin transition molecule with a Fe2+ ion. Coulomb blockade characteristics reveal a double quantum dot behavior in a parallel…
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and…
We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The…