Related papers: Tunable Negative Differential Resistance controlle…
We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…
Exchange forces on the movable dot ("shuttle") in a magnetic shuttle device depend on the parity of the number of shuttling electrons. The performance of such a device can therefore be tuned by changing the strength $U$ of Coulomb…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We demonstrate spin injection and detection in single wall carbon nanotubes using a 4-terminal, non-local geometry. This measurement geometry completely separates the charge and spin circuits. Hence all spurious magnetoresistance effects…
The steady current-voltage characteristics of ferromagnet-silicon-ferromagnet channels with tunable emitter and collector polarizations are investigated in the presence of spin blockade generalizing the model developed by Pershin Yu V and…
We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single…
We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels…
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we…
Coherent quantum phase slips are expected to lead to a blockade of dc conduction in sufficiently narrow superconducting nanowires below a certain critical voltage. We present measurements of NbN nanowires in which not only is a critical…
The dynamic polarization of nuclear spins interacting with resident electrons under resonant excitation of trions is studied in a nominally undoped GaAs/(Al,Ga)As quantum well. Unlike in common time-resolved pump-probe techniques, we used a…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
We consider a quantum dot attached to leads in the Coulomb blockade regime which has a spin 1/2 ground state. We show that by applying an ESR field to the dot-spin the stationary current in the sequential tunneling regime exhibits a…
Observation of the interplay between interacting energy levels of two spin species is limited by the difficulties in continuously tracking energy levels, and thus leaves spin transport in quantum wires still not well understood. We present…
We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to…
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…