Related papers: Tunable Negative Differential Resistance controlle…
Shrinking spintronic devices to the nanoscale ultimately requires localized control of individual atomic magnetic moments. At these length scales, the exchange interaction plays important roles, such as in the stabilization of…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…
Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and…
In a nanomagnet (whose total spin S< 1000), very small polarized currents can lead to magnetic reversal. Treating on the same footing the transport and magnetic properties of a nanomagnet connected to magnetic leads via tunneling barriers,…
Electrical contacts between nano-engineered systems are expected to constitute the basic building blocks of future nano-scale electronics. However, the accurate characterization and understanding of electrical contacts at the nano-scale is…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…
Experimental results for sequential transport through a lateral quantum dot in the regime of spin blockade induced by spin dependent tunneling are compared with theoretical results obtained by solving a master equation for independent…
Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the…
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
In a straightforward application of molecular nanospintronics to quantum computing, single-molecule spin transistors can be used to measure and control nuclear spin qubits. A jump in the conductance occurs when the electronic spin inverts…
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
Control over quantum systems is typically achieved by time-dependent electric or magnetic fields. Alternatively, electronic spins can be controlled by spin-polarized currents. Here we demonstrate coherent driving of a single spin by a…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
We identify the leading processes of electron transport across finite-length segments of proximitized nanowires and build a quantitative theory of their two-terminal conductance. In the presence of spin-orbit interaction, a nanowire can be…
We study the interplay between Coulomb blockade and superconductivity in a tunable superconductor-superconductor-normal metal single-electron transistor. The device is realized by connecting the superconducting island via an oxide barrier…
We investigate the transport properties of a new class of ratchets. The device is constructed by applying an ac voltage to the metallic single electron tunneling transistor, and a net transport current is induced by the time-dependent…