Related papers: Current-Driven Magnetic Memory with Tunable Magnet…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…
We analyze the electrical characteristics of a circuit consisting of a free thin-film magnetic layer and source and drain electrodes that have opposite magnetization orientations along the free magnet's two hard directions. We find that…
The opening or closing mechanism of a voltage-gated ion channel is triggered by the potential difference crossing the cell membrane in the nervous system. Based on this picture, we model the ion channel as a nanoscale two-terminal ionic…
Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
Motivated by recent experimental work on magnetic properties of Si-MOSFETs, we report a calculation of magnetisation and susceptibility of electrons in an inversion layer, taking into account the co-ordinate dependence of electron wave…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
A negative-positive-negative switching behavior of magnetoresistance (MR) with temperature is observed in a ferromagnetic shape memory alloy Ni_1.75Mn_1.25Ga. In the austenitic phase between 300 and 120 K, MR is negative due to s-d…
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first…
Point-contacts (PC) offer a simple way to create high current densities, 10^9 A/cm^2 and beyond, without substantial Joule heating. We have shown recently (Nano Letters, 7 (2007) 927) that conductivity of nanosized PCs between a normal and…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high…
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their…
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the…
We fabricated Co nano-rings incorporated in the vertical pseudo-spin-valve nanopillar structures with deep submicron lateral sizes. It is shown that the current-perpendicular-to-plane giant magnetoresistance can be used to characterize a…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…
We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…