Related papers: Current-Driven Magnetic Memory with Tunable Magnet…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
We have observed distinct temperature-dependent magnetization reversal modes in a perpendicular (Co/Pd)4/Co/Cu/(Co/Ni)4/Co pseudo-spin-valve, which are correlated with spin-transport properties. At 300 K, magnetization reversal occurs by…
Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the…
We investigate coherent electron transport through a parallel circuit of two quantum dots, each of which has a single tunable energy level. Electrons tunneling via each dot from the left lead interfere with each other at the right lead. It…
Memristors have pinched hysteresis loops in the $V-I$ plane. Ideal memristors are everywhere non-linear, cross at zero and are rotationally symmetric. In this paper we extend memristor theory to produce different types of non-ideality and…
Alternating current susceptibility and direct current magnetization have been studied for polycrystalline Ca$_{1-x}$Mn$_x$O. On increasing the Mn content, magnetic ordering changes from spin-glass behavior for $0.25 \leqslant x \leqslant…
By the application of a small oscillating magnetic field parallel to the main magnetic field and perpendicular to the transport current, we were able to generate a voltage dip in the I-V curves of Nb$_3$Sn similar to the peak-effect pattern…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state…
A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we…
Metal-Nb$_{2}$O$_{5-x}$-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament…
A polarity-dependent reversible change in the current-voltage characteristics between states corresponding to different values of the excess current ${{I}_{exc}}$ is observed for bias voltages of several hundred millivolts in…
In this work, we consider a type of magnetic memory where information is encoded into the mutual arrangements of magnets. The device is an active ring circuit comprising magnetic and electronic parts connected in series. The electric part…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
We investigate the real-time current response of strongly-correlated quantum dot systems under sinusoidal driving voltages. By means of an accurate hierarchical equations of motion approach, we demonstrate the presence of prominent memory…
Magnetic and transport properties of $Co Sr_2 Y_{1-x} Ca_x Cu_2 O_7$ ($x=0 \sim 0.4$) system have been investigated. A broad maximum in M(T) curve, indicative of low-dimensional antiferromagnetic ordering originated from $CoO_{1+\delta}$…
Dynamic structure of the intermediate state was studied in pinning-free thick Pb strips using real-time magneto-optical visualization. It is found that topological hysteresis can be lifted by applying sufficiently large current. Namely,…