Related papers: Current-Driven Magnetic Memory with Tunable Magnet…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
Single crystals of Nd0.5Ca0.5MnO3 and Pr0.6Ca0.4MnO3 show current-induced insulator-metal transitions at low temperatures. In addition, the charge-ordering transition temperature decreases with increasing current. The electroresistive…
We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We…
The electronic transport properties and the magnetic susceptibility were measured in detail in $YBaCo_2O_{5.45}$. Close to the so-called metal-insulator transition, strong effects of resistance relaxation, a clear thermal hysteresis and a…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
We present a method to measure the effective field contribution to spin-transfer-induced interactions between the magnetic layers in a trilayer nanostructure, which enables spin-current effects to be distinguished from the usual…
We measure the dynamic resistance of a Co/Cu/Co trilayer nanopillar at varied magnetic field $H$ and current $I$. The resistance displays the usual behavior, almost symmetric in $H$, both when magnetization switching is hysteretic at small…
An exact solution is presented for tunneling through a negative-U d-fold degenerate molecular quantum dot weakly coupled to electrical leads. The tunnel current exhibits hysteresis if the level degeneracy of the negative-U dot is larger…
Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…
Combining quasistatic and time-resolved transport measurements with X-ray and neutron diffraction experiments we study the non-equilibrium states that arise in pure and in Ti substituted Ca$_2$RuO$_4$ under the application of current…
We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via…
We discuss the memristive fingerprints of the hybrid Cassie-Mayr model of electric arcs. In particular, it is shown that (i) the voltage-current characteristic of the model has the pinched hysteresis nature, (ii) the voltage and current…
We compare magnetization switching in Co/Cu/Co nanopillars with uncoupled and dipole-field coupled Co layers. In uncoupled nanopillars, current-driven switching is hysteretic at low magnetic field H and changes to reversible, characterized…
Diode is one of basic electronic components. It has a nonreciprocal current response, associated with a broken space/time reversal symmetry. Here we demonstrate prototypes of superconducting diodes operational at zero magnetic field. They…
In many transition metal oxides the electrical resistance is observed to undergo dramatic changes induced by large biases. In magnetite, Fe$_3$O$_4$, below the Verwey temperature, an electric field driven transition to a state of lower…
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…
We have investigated numerically the phase--locking behavior of two-dimensional Josephson junction arrays,taking into account a finite inductance ($l\stackrel{>}{\sim}1$) of the unit cell and external magnetic fields. Within this model we…
We study current-driven magnetization switching in nanofabricated Ni84Fe16/Cu/Ni84Fe16 trilayers at 295 K and 4.2 K. The shape of the hysteretic switching diagram at low magnetic field changes from 295 K to 4.2 K. The reversible behavior at…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…