We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy.
@article{arxiv.2302.09407,
title = {Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices},
author = {Georgii Paradezhenko and Dmitrii Prodan and Anastasiia Pervishko and Dmitry Yudin and Anis Allagui},
journal= {arXiv preprint arXiv:2302.09407},
year = {2024}
}