Related papers: Current-Driven Magnetic Memory with Tunable Magnet…
Single phase Ni substituted LiCo1-xNixO2 solid solutions with x < 0.15 have been synthesized to study the effect of substitution on the magnetic behavior. Two different techniques, magnetic susceptibility and electron paramagnetic…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
Phase transitions driven by external stimuli are central to condensed matter physics, providing critical insights into symmetry breaking and emergent phenomena. Recently, ferrimagnetic (FiM) Mn$_3$Si$_2$Te$_6$ has attracted considerable…
We propose to use superconductor-magnet multi-layer structure to achieve high critical current density by invoking polaronic mechanism of pinning. The magnetic layers should have large magnetic susceptibility to enhance the coupling between…
We observe magnetization dynamics induced by spin momentum transfer in the noise spectra of current perpendicular to the plane giant magnetoresistance spin valves. The dynamics are observable only for those combinations of current direction…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's…
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field…
We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or…
It is shown that with increasing magnitude of current (I), resistivity of Sm0.6Sr0.4MnO3 transforms from a smooth to a discontinuous insulator-metal transition which is also accompanied by an abrupt decrease in temperature of the sample. We…
The electrical resistivity of polycrystalline Bi2Sr2Ca2Cu3O10-x (Bi-2223) was measured vs. applied magnetic fields up to 0.45 T, applied currents up to 1 A, and temperature from liquid nitrogen temperature (LN2) to room temperature. In the…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
We analyze here the behavior near the 2D insulator-superconductor quantum critical point in the presence of a perpendicular magnetic field. We show that with increasing field $H$, the quantum disordered and quantum critical regimes, in…