We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange interaction). To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting the D/A of Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed area, which is due to the current induced Neel wall motion and a strong exchange coupling at this interface.
@article{arxiv.2006.03398,
title = {All-Linear Multistate Magnetic Switching Induced by Electrical Current},
author = {Meiyin Yang and Yanru Li and Jun Luo and Yongcheng Deng and Nan Zhang and Yan Cui and Peiyue Yu and Tengzhi Yang and Yu Sheng and Sumei Wang and Jing Xu and Chao Zhao and Kaiyou Wang},
journal= {arXiv preprint arXiv:2006.03398},
year = {2021}
}