Related papers: A single-electron inverter
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…
We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak…
The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…
The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's…
Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a non-zero DC source-drain bias voltage. Under…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
In this paper I study the posibility of inducing a single-electron current by rotating a non-magnetic conducting rod with a small tunnel junction immerse in a uniform magnetic field perpendicular to the plane of motion. I show first, by…
Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales…
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon…
We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo…
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
In this paper, a non-isolated high step-up DC-DC converter has been proposed for renewable energy applications. The proposed structure converter has been derived from the fundamental Zeta converter, in both of which only a single switch is…
Solar micro-inverters are becoming increasingly popular as they are modular, and they posses the capability of extracting maximum available power from the individual photovoltaic (PV) modules of a solar array. For realizing micro-inverters…