High Temperature Conductance of the Single Electron Transistor
Mesoscale and Nanoscale Physics
2009-10-31 v3
Abstract
The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and found to explain recent experimental data.
Keywords
Cite
@article{arxiv.cond-mat/9806117,
title = {High Temperature Conductance of the Single Electron Transistor},
author = {Georg Goeppert and Hermann Grabert},
journal= {arXiv preprint arXiv:cond-mat/9806117},
year = {2009}
}
Comments
4 pages, 2 figures