English

Universality and the zero-bias conductance of the single-electron transistor

Mesoscale and Nanoscale Physics 2010-01-13 v1 Strongly Correlated Electrons

Abstract

The thermal dependence of the electrical conductance of the single-electron transistor (SET) in the zero-bias Kondo regime is discussed. An exact mapping to the universal curve for the symmetric Anderson model is established. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. Illustrative numerical renormalization-group results, in excellent agreement with the mapping, are presented.

Keywords

Cite

@article{arxiv.0906.4063,
  title  = {Universality and the zero-bias conductance of the single-electron transistor},
  author = {M. Yoshida and A. C. Seridonio and L. N. Oliveira},
  journal= {arXiv preprint arXiv:0906.4063},
  year   = {2010}
}

Comments

14 paged, 6 figures; submitted to Physical Review B