From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
Mesoscale and Nanoscale Physics
2009-10-31 v1 Strongly Correlated Electrons
Abstract
We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.
Cite
@article{arxiv.cond-mat/9807233,
title = {From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor},
author = {D. Goldhaber-Gordon and J. Goeres and M. A. Kastner and Hadas Shtrikman and D. Mahalu and U. Meirav},
journal= {arXiv preprint arXiv:cond-mat/9807233},
year = {2009}
}
Comments
3 pages plus one 2 page postscript file of 5 figures. Submitted to PRL