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Is the Multichannel Kondo Model Appropriate to Describe the Single Electron Transistor?

Strongly Correlated Electrons 2007-05-23 v1

Abstract

We investigate the low-temperature dynamics of single electron boxes and transistors close to their degeneracy point using renormalization group methods. We show that intermode scattering is a relevant perturbation and always drives the system to the two-channel Kondo fixed point, where the two channels correspond to the real spins of the conduction electrons. However, the crossover temperature T^*, below which Matveev's two-channel Kondo scenario [K.A. Matveev, Phys. Rev. B 51, 1743 (1995)] develops decreases exponentially with the number of conduction modes in the tunneling junctions and is extremely small in most cases. Above T^* the 'infinite channel model' of Ref.{onlinecite{Schoen}} turns out to be a rather good approximation. We discuss the experimental limitations and suggest a new experimental setup to observe the multichannel Kondo behavior.

Keywords

Cite

@article{arxiv.cond-mat/0003013,
  title  = {Is the Multichannel Kondo Model Appropriate to Describe the Single Electron Transistor?},
  author = {Gergely Zarand and Gergely T. Zimanyi and Frank Wilhelm},
  journal= {arXiv preprint arXiv:cond-mat/0003013},
  year   = {2007}
}

Comments

8 PRB pages, with 5 eps figures, REVTeX