In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we find that in general the electrical current is not proportional to the frequency of the external signals in the single-electron devices, due to the strong quantum coherence tunneling effect.
@article{arxiv.1012.0878,
title = {High frequency limit for single-electron pumping operations},
author = {Chuan-Yu Lin and Wei-Min Zhang},
journal= {arXiv preprint arXiv:1012.0878},
year = {2010}
}