Related papers: Spin Injection from Ferromagnetic Metals into Gall…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…
We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy…
Spin-polarized scanning tunneling microscopy (SP-STM) measures tunnel magnetoresistance (TMR) with atomic resolution. While various methods for achieving SP probes have been developed, each is limited with respect to fabrication,…
We consider the spin injection from Fe into ZnSe and GaAs in the ballistic limit. By means of the ab initio SKKR method we calculate the ground state properties of epitaxial Fe|ZnSe(001) and Fe|GaAs(001) heterostructures. Three injection…
By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Spin lasers leverage electron spin-polarisation to control photon polarisation, offering the potential for lower thresholds, rapid modulation, and all-optical data processing. We report successful spin injection into a commercial Vertical…
We study the electronic structure and magnetic properties of h-BN triangular clusters embedded in graphene supercells. We find that, depending on the sizes of the clusters and the graphene separation region between them, spin polarization…
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs…
We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped…
Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)-the most produced semiconductor materials second only to silicon. However, recent direct experimental…
Nonequilibrium electron spin polarization is calculated under spin injection from one ferromagnet to another in magnetic junction. It is shown that the nonequilibrium spin polarization can be comparable with equilibrium one if the material…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device…
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
We report a two-step process for the fabrication of superconductor-insulator-normal metal tunnel junctions using NbN as the superconducting electrode and its surface oxide as the insulating tunnel barrier, and investigate its efficacy in…
A scanning tunneling microscope (STM) with a magnetic tip that has a sufficiently strong spin-polarization can be used to map the sample's spin structure down to the atomic scale but usually lacks the possibility to absolutely determine the…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…