Related papers: Spin Injection from Ferromagnetic Metals into Gall…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge…
Spin-polarized current through an Al nanoparticle in tunnel contact with two ferromagnets is measured as a function of the direction of the applied magnetic field. The nanoparticle filters the spin of injected electrons along a direction…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…
Room-temperature ferromagnetic semiconductor is vital in nonvolatile digital circuits and it can provide an idea system where we can make use of both charge and spin of electrons. However, seeking room-temperature ferromagnetic…
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become…
Electroluminescence in organic semiconductors strongly depends on the relative population of excited singlet and triplet excitonic states resulting from recombination of injected carriers. In conventional organic light-emitting diodes…
Approaching a two-component tip made of a superconductor (S) and a ferromagnet (F) from a magnetic sample allows for two distinct tunneling processes between the ferromagnets, through S: i) Charge and spin are conserved; ii) Charge and spin…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
The spin polarization of ferromagnetic alkali-metal iron antimonides KFe4Sb12 and NaFe4Sb12 is studied by point-contact Andreev reflection using superconducting Nb and Pb tips. From these measurements an intrinsic transport spin…
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins…
Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away…