Related papers: Interface engineering of the anomalous Hall effect…
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…
The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…
The interplay between vortex guiding and the Hall effect in superconducting Nb films with periodically arranged nanogrooves is studied via four-probe measurements in standard and Hall configurations and accompanying theoretical modeling.…
We theoretically show that the three-dimensional (3D) topological insulator (TI)/thin-film ferromagnetic metal (FMM) bilayer structure is possible to be a quantum anomalous Hall (QAH) insulator with a wide global band gap. Studying the band…
The recent realization of epitaxial SrCoO$_3$ thin films has triggered a renewed interest in their electronic, magnetic, and ionic properties. Here we uncover several unusual magneto-transport properties of this compound, suggesting that it…
Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the…
Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the…
Two-dimensional electron systems with spin-orbit coupling in the proximity of a superconductor and a magnetic insulator have recently been considered as promising candidates to realize topological superconducting phases. Here we discuss…
We demonstrate precise control of magnetism in MnBi2Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures,…
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…
We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an external magnetic field. However, as established in the very…
We report the observation of anomalous Hall effect in Mn$_3$Sn polycrystalline thin films deposited on Pt coated Al$_2$O$_3$ substrate with a large anomalous Hall conductivity of 65($\Omega$cm)$^{-1}$ at 3K. The Hall and magnetic…
The anomalous Hall effect is investigated for ferromagnetic Fe3Sn2 single crystal with geometrically frustrated kagome bilayer of Fe. The scaling behavior between anomalous Hall resistivity rho_{xy}^{A} and longitudinal resistivity rho_{xx}…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of…
We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier…
The transverse current (j_H) due to anomalous Hall effect (AHE) is usually assumed to be perpendicular to the magnetization (m) in ferromagnetic materials, which governs the experiments in spintronics. Generally, this assumption is derived…
The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect…
We demonstrate that a distinct high-disorder anomalous Hall effect phase emerges at the correlated insulator threshold of ultra-thin, amorphous, ferromagnetic CNi3 films. In the weak localization regime, where the sheet conductance G >>…