The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the AHE, the quantum anomalous Hall effect (QAHE), in Cr- or V-doped topological insulator (TI) (Sb,Bi)2Te3 thin films, the AHE in magnetic TIs has been attracting significant interest. However, one of the puzzles in this system has been that while Cr- or V-doped (Sb,Bi)2Te3 and V-doped Bi2Se3 exhibit AHE, Cr-doped Bi2Se3 has failed to exhibit even ferromagnetic AHE, the expected predecessor to the QAHE, though it is the first material predicted to exhibit the QAHE. Here, we have successfully implemented ferromagnetic AHE in Cr-doped Bi2Se3 thin films by utilizing a surface state engineering scheme. Surprisingly, the observed ferromagnetic AHE in the Cr-doped Bi2Se3 thin films exhibited only positive slope regardless of the carrier type. We show that this sign problem can be explained by the intrinsic Berry curvature of the system as calculated from a tight-binding model combined with a first-principles method.
@article{arxiv.1905.01300,
title = {Ferromagnetic Anomalous Hall Effect in Cr-doped Bi$_2$Se$_3$ Thin Films via Surface-State Engineering},
author = {Jisoo Moon and Jinwoong Kim and Nikesh Koirala and Maryam Salehi and David Vanderbilt and Seongshik Oh},
journal= {arXiv preprint arXiv:1905.01300},
year = {2019}
}