Transport measurements on thin films of the prototypical altermagnet MnTe have reported conflicting phenomena of anomalous Hall effects (AHE), including opposite signs and thickness-independent resistivity. Here we resolve these discrepancies by separating bulk and surface contributions to the AHE for different crystal terminations. Using first-principles calculations and symmetry-based effective models, we show that although the bulk hosts a characteristic g-wave Fermi surface, surface states within the bulk gap acquire a ferromagnet-like spin polarization and dominate the AHE at experimentally relevant Fermi energies. While the surface magnetization follows the surface spin sublattice, the resulting AHE is uniquely determined by the bulk N\'eel order for a given termination. Both bulk and surface contributions are closely linked to a small but finite out-of-plane orbital magnetization. Incorporating realistic interfacial chemistry further reveals that a Te capping layer can reverse the surface AHE sign relative to that on an InP substrate. Our results establish a microscopic framework for interpreting and engineering AHE responses in altermagnetic thin films through interface design.
@article{arxiv.2603.12259,
title = {Emergent Anomalous Hall Effect from Surface States in the Altermagnet MnTe Thin Films},
author = {Yufei Zhao and Saswata Mandal and Chao-Xing Liu and Binghai Yan},
journal= {arXiv preprint arXiv:2603.12259},
year = {2026}
}