{\alpha}-MnTe is a prototypical altermagnet exhibiting a strong anomalous Hall effect (AHE), despite having a nearly vanishing magnetization. Lately, sample-to-sample variations of the amplitude of the AHE have raised concerns of a possible defect related origin, especially in thin films. Here, we study the AHE in {\alpha}-MnTe films grown on SrF2 that have the crystal structure and m'm'm magnetic point group symmetry expected for bulk. By studying the scaling of the AHE with conductivity for those films and previously reported measurements in the literature, we find that sample-to-sample variations are well explained by a scaling law consistent with a hopping origin. Importantly, a comparison with other magnetic semiconductors reveals the colossal amplitude of the AHE of {\alpha}-MnTe compared to its measured spontaneous magnetization from magnetometry and polarized neutron reflectivity. Our findings address the important fundamental question of the origin of the AHE of {\alpha}-MnTe and further demonstrate the potential of altermagnets as promising spintronic materials.
@article{arxiv.2603.00242,
title = {Conductivity scaling of the anomalous Hall effect in the altermagnetic semiconductor {\alpha}-MnTe},
author = {Sara Bey and Shelby S. Fields and Nicholas G. Combs and Bence G. Márkus and Jiashu Wang and Liam Schmidt and Lincoln Curtis and Allecia Dodd-Noble and Alexander Poulin and Syed Mohammad Shahed and Resham Regmi and Mariia Holub and Phillipe Ohresser and Arun Bansil and Swastik Kar and Haile Ambaye and Valeria Lauter and László Forró and Cory D. Cress and Joseph C. Prestigiacomo and Nirmal Ghimire and Alberto de la Torre and Steven P. Bennett and Xinyu Liu and Badih A. Assaf},
journal= {arXiv preprint arXiv:2603.00242},
year = {2026}
}