We report anomalous Hall effect (AHE) in single crystals of quasi-two-dimensional Fe3−xGeTe2 (x≈0.36) ferromagnet grown by the flux method which induces defects on Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρxx2M/μ0Heff implies that the AHE in Fe3−xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxyA below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by possible spin-reorientation transition.
@article{arxiv.1804.06392,
title = {Anomalous Hall effect in van der Waals bonded ferromagnet Fe$_{3-x}$GeTe$_2$},
author = {Yu Liu and Eli Stavitski and Klaus Attenkofer and C. Petrovic},
journal= {arXiv preprint arXiv:1804.06392},
year = {2018}
}