Related papers: Interface engineering of the anomalous Hall effect…
The origin of simultaneous electronic, structural and magnetic transitions in bulk rare-earth nickelates ($RE$NiO$_3$) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure…
We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange-coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of ~0.09(2e2/h) at low…
A single layer ferromagnetic film magnetized in the plane of an ac current flow, exhibits a characteristic Hall voltage with harmonic and second harmonic components, which is attributed to the presence of spin currents with polarization…
We derive the anomalous Hall contributions arising from dipolar interactions to diffusive spin transport in magnetic insulators. Magnons, the carriers of angular momentum in these systems, are shown to have a non-zero Berry curvature,…
Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…
We investigate the unusual temperature dependence of the anomalous Hall effect in Ni. By varying the thickness of the MBE-grown Ni films, the longitudinal resistivity is uniquely tuned without resorting to doping impurities; consequently,…
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the…
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…
The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…
We explored the possibility of realizing quantum anomalous Hall effect by placing heavy-element atomic layer on top of monolayer CrI$_{3}$ with a natural cleavage surface and broken time-reversal symmetry. We showed that CrI$_{3}$/X (X =…
Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has…
We identify an intrinsic mechanism of the anomalous Hall effect for non-symmorphic chiral superconductors. This mechanism relies on both a nontrivial multi-band chiral superconducting order parameter, which is a mixture of pairings of even…
Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that…
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…
We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3…
The intricate interplay between magnetism and the topology of electronic structures provides a rich avenue for tailoring materials with unique and potent anomalous transport properties. In this paper, we present a strategy for inducing…
The cubic Cu$_3$Au-type $X$Pt$_3$ family ($X$ = V, Cr, and Mn) is a topological semimetal characterized by anti-crossing gapped nodal lines near the Fermi level, which give rise to significant Berry curvatures and thus to the anomalous Hall…
Interfacial spin to charge conversion arises due to an electric potential perpendicular to the interface. The electric potential can be artificially induced, for example, using ferroelectric and piezoelectric thin films at the interface. An…
We consider a model of spinful fermions on the triangular lattice which exhibits a C=2 Chern insulator (CI) phase with a quantized anomalous Hall effect, sandwiched between two normal insulator (NI) phases. The first NI-CI quantum phase…