Related papers: Interface engineering of the anomalous Hall effect…
The realization of ambient-pressure superconductivity in La$_3$Ni$_2$O$_7$ thin films raises a fundamental question: is the metallic ground state driven by lattice strain or interfacial charge reconstruction? Using fully self-consistent…
The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present…
The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in…
Here, we explore the role of inherent altermagnetic topology in transverse transport phenomena (such as crystal/anomalous Hall, Nernst, and thermal Hall effects) in several famous altermagnets, including tetragonal…
In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a…
Altermagnets host spin-split electronic bands without net magnetization, enabling spin-polarized transport in the absence of conventional ferromagnetism. RuO$_2$ has been proposed as a candidate altermagnet, yet experimental reports remain…
We have studied the anomalous Hall effect (AHE) in strained thin films of the frustrated antiferromagnet Mn$_{3}$NiN. The AHE does not follow the conventional relationships with magnetization or longitudinal conductivity and is enhanced…
The anomalous Hall effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also…
Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic…
Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped…
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn,…
Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt…
We report the planar and anomalous Nernst effect in epitaxial thin films of spin polarized La2/3Sr1/3MnO3. The thermal counterpart of the anomalous Hall effect in this material (i.e. the anomalous Nernst effect) shows a extreme sensitivity…
The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition…
The electronic structure and intrinsic anomalous Hall conductivity of nickel have been calculated based on the generalized gradient approximation (GGA) plus on-site Coulomb interaction (GGA+U) scheme. It is found that the intrinsic…
We investigate topological features of electronic structures which produce large anomalous Hall effect in the non-collinear antiferromagnetic metallic states of anti-perovskite manganese nitrides by first-principles calculations. We first…
The quantum anomalous Hall effect can occur in single and few layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated…
Antiferromagnetic manganese-based nitride antiperovskites, such as Mn$_3$NiN, hold a triangular frustrated magnetic ordering over their kagome lattice formed by the Mn atoms along the (111)-plane. As such, frustration imposes a non-trivial…
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the…
Strain engineering offers a powerful route to tailor topological electronic structures in correlated oxides, yet conventional epitaxial strain approaches introduce extrinsic factors such as substrate-induced phase transitions and…