We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO3/CaMnO3 heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier density in CaIrO3 layer via electric double layer gating technique. As the Fermi energy of CaIrO3 is tuned close to the Dirac line node, anomalous Hall conductivity is enlarged in both carrier-type samples. This result reveals that the anomalous Hall effect comes from the intrinsic origin reflecting the Dirac like dispersion in CaIrO3. We propose that band splitting induced by the interface ferromagnetism yields several band crossing points near the Dirac line node. These points play as a source of the Berry curvature and contribute to the anomalous Hall effect.
@article{arxiv.2208.02479,
title = {Electric field control of anomalous Hall effect in CaIrO$_3$/CaMnO$_3$ heterostructure},
author = {R. Nishino and T. C. Fujita and M. Kawasaki},
journal= {arXiv preprint arXiv:2208.02479},
year = {2022}
}