Related papers: Interface engineering of the anomalous Hall effect…
A key step towards dissipationless transport devices is the quantum anomalous Hall effect, which is characterized by an integer quantized Hall conductance in a ferromagnetic insulator with strong spin-orbit coupling. In this work, the…
The recent studies on the anomalous Hall effect (AHE) have revealed an intrinsic relationship between the topological band structure and the experimentally observed transverse conductivity. Consequently, this has led to a heightened focus…
The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities…
Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned…
We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator Tm3Fe5O12 films grown with pulsed laser deposition on substituted-Gd3Ga5O12 substrate which maximizes the tensile…
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…
In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple…
We investigate the temperature dependence of the intrinsic anomalous Hall conductivity in Fe$_3$Ge, which is a ferromagnetic topological metal. We observe a significant anisotropy in the anomalous Hall conductivity between in-plane and…
We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO(001), as a function of film thickness. It was found that the epitaxial CFA films…
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated…
In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in…
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of…
Antiferromagnetic Mn$_{3}$Ge with a non-collinear Kagome structures present exciting prospects for exploring Berry curvature driven anomalous Hall effects (AHE). Despite substantial progress in bulk systems, the synthesis of crystalline…
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…
Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin…
Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength…
The emergence of new physical properties at the interfaces between complex oxides has always been of both fundamental and practical importance. Here, we report the observation of a giant topological Hall resistivity of $\sim 2.8 \mu \Omega$…
Magnetotransport is at the center of the spintronics. Mn3Sn, an antiferromagnet that has a noncollinear 120{\deg} spin order, exhibits large anomalous Hall effect (AHE) at room temperature. But such a behavior has been remained elusive in…