Related papers: High Breakdown Field Multi-kV UWBG AlGaN Transisto…
This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high…
Graphene is an ideal material for hot-electron bolometers, due to its low heat capacity and weak electron-phonon coupling. Nanostructuring graphene with quantum dot constrictions yields detectors with extraordinarily high intrinsic…
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long…
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias…
This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at 12.5 GHz with high electromechanical coupling (k2) of 9.5% and quality factor (Q) of 208, resulting in a figure of merit (FoM, Qk2)…
Transitioning to solid-state ultraviolet (UV) lighting is critical for reducing global energy utilization to meet net-zero targets. AlGaN-based far-UVC LEDs offer a mercury-free, energy-efficient alternative to conventional mercury lamps,…
Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the…
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classified as insulators. However, the emergence of…
For the SwissFEL project, an advanced high gradient low emittance gun is under development. Reliable operation with an electric field, preferably above 125 MV/m at a 4 mm gap, in the presence of an UV laser beam, has to be achieved in a…
In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…
The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications…
Feshbach association of ultracold molecules using narrow resonances requires exquisite control of the applied magnetic field. Here we present a magnetic field control system to deliver magnetic fields of over 1000 G with ppm-level precision…
We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and…
High Q-factors of microresonators are crucial for nonlinear integrated photonics, as many nonlinear dynamics have quadratic or even cubic dependence on Q-factors. The unique material properties make AlN microresonators invaluable for…
Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap…
Printed circuit metasurfaces have attracted significant attention in the microwave community for their versatile wavefront manipulation capability. Despite their promising potential in telecommunications and radar applications, few…
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with…
Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…